1 tm ordering information part number temperature range screening level package hcts157dmsr -55 o c to +125 o c intersil class s equivalent 16 lead sbdip hcts157kmsr -55 o c to +125 o c intersil class s equivalent 16 lead ceramic flatpack hcts157d/sample +25 o c sample 16 lead sbdip hcts157k/sample +25 o c sample 16 lead ceramic flatpack hcts157hmsr +25 o c die die HCTS157MS radiation hardened quad 2-input multiplexers pinouts 16 lead ceramic dual-in-line metal seal package (sbdip) mil-std-1835 cdip2-t16 top view 16 lead ceramic metal seal flatpack package (flatpack) mil-std-1835 cdfp4-f16 top view 14 15 16 9 13 12 11 10 1 2 3 4 5 7 6 8 s 1i0 1i1 1y 2i0 2i1 gnd 2y vcc 4i0 4i1 4y 3i0 3i1 3y e 2 3 4 5 6 7 8 116 15 14 13 12 11 10 9 s 1i0 1i1 1y 2i0 2i1 gnd 2y vcc 4i0 4i1 4y 3i0 3i1 3y e features ? 3 micron radiation hardened cmos sos total dose 200k rad (si) sep effective let no upsets: >100 mev-cm 2 /mg single event upset (seu) immunity < 2 x 10 -9 errors/ bit-day (typ) dose rate survivability: >1 x 10 12 rad (si)/s dose rate upset >10 10 rad (si)/s 20ns pulse latch-up free under any conditions fanout (over temperature range) - standard outputs 10 lsttl loads military temperature range: -55 o c to +125 o c significant power reduction compared to lsttl ics dc operating voltage range: 4.5v to 5.5v lsttl input compatibility - vil = 0.8v max - vih = vcc/2 min input current levels ii 5 a at vol, voh description the intersil HCTS157MS is a radiation hardened quad 2-input multiplexers with select and enable inputs. the HCTS157MS utilizes advanced cmos/sos technology to achieve high-speed operation. this device is a member of radiation hardened, high-speed, cmos/sos logic family. the HCTS157MS is supplied in a 16 lead ceramic flatpack (k suffix) or a sbdip package (d suffix). august 1995 spec number 518610 file number 2464.2 db na caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil (and design) is a trademark of intersil americas inc. copyright ? intersil americas inc. 2002. all rights reserved
2 HCTS157MS functional block diagram truth table enable select inputs data inputs output e si0i1y hxxxl lllxl llhxh lhxll lhxhh h = high level l = low level x = immaterial 4y 3 circuits identical to circuit in above dashed outline 12 s e 1 15 1y 2y 3y 9 7 4 10 1i0 1i1 2i0 2i1 3i0 3i1 11 6 5 3 2 4i0 4i1 13 14 spec number 518610
3 specifications HCTS157MS absolute maximum ratings reliability information supply voltage (vcc). . . . . . . . . . . . . . . . . . . . . . . . . -0.5v to +7.0v input voltage range, all inputs . . . . . . . . . . . . .-0.5v to vcc +0.5v dc input current, any one input . . . . . . . . . . . . . . . . . . . . . . . . 10ma dc drain current, any one output . . . . . . . . . . . . . . . . . . . . . . . 25ma (all voltage reference to the vss terminal) storage temperature range (tstg) . . . . . . . . . . . -65 o c to +150 o c lead temperature (soldering 10sec) . . . . . . . . . . . . . . . . . . +265 o c junction temperature (tj) . . . . . . . . . . . . . . . . . . . . . . . . . . +175 o c esd classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . class 1 thermal resistance ja jc sbdip package. . . . . . . . . . . . . . . . . . . . 73 o c/w 24 o c/w ceramic flatpack package . . . . . . . . . . . 114 o c/w 29 o c/w maximum package power dissipation at +125 o c ambient sbdip package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68w ceramic flatpack package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44w if device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: sbdip package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mw/ o c ceramic flatpack package . . . . . . . . . . . . . . . . . . . . . . 8.8mw/ o c caution: as with all semiconductors, stress listed under ?absolute maximum ratings? may be applied to devices (one at a time) w ithout resulting in permanent damage. this is a stress rating only. exposure to absolute maximu m rating conditions for extended periods may affect device rel iability. the conditions listed under ?electrical performance characteristics? are the only conditions recommended for satisfactory device operation. operating conditions supply voltage (vcc). . . . . . . . . . . . . . . . . . . . . . . . +4.5v to +5.5v input rise and fall times at 4.5v vcc (tr, tf) . . . . . . .500ns max operating temperature range (t a ) . . . . . . . . . . . . -55 o c to +125 o c input low voltage (vil). . . . . . . . . . . . . . . . . . . . . . . . . 0.0v to 0.8v input high voltage (vih) . . . . . . . . . . . . . . . . . . . . . . .vcc/2 to vcc table 1. dc electrical performance characteristics parameter symbol (note 1) conditions group a sub- groups temperature limits units min max quiescent current icc vcc = 5.5v, vin = vcc or gnd 1+25 o c-40 a 2, 3 +125 o c, -55 o c - 750 a output current (sink) iol vcc = 4.5v, vih = 4.5v, vout = 0.4v, vil = 0v 1+25 o c7.2-ma 2, 3 +125 o c, -55 o c6.0-ma output current (source) ioh vcc = 4.5v, vih = 4.5v, vout = vcc - 0.4v, vil = 0v 1+25 o c-7.2-ma 2, 3 +125 o c, -55 o c-6.0-ma output voltage low vol vcc = 4.5v, vih = 2.25v, iol = 50 a, vil = 0.8v 1, 2, 3 +25 o c, +125 o c, -55 o c- 0.1 v vcc = 5.5v, vih = 2.75v, iol = 50 a, vil = 0.8v 1, 2, 3 +25 o c, +125 o c, -55 o c- 0.1 v output voltage high voh vcc = 4.5v, vih = 2.25v, ioh = -50 a, vil = 0.8v 1, 2, 3 +25 o c, +125 o c, -55 o cvcc -0.1 -v vcc = 5.5v, vih = 2.75v, ioh = -50 a, vil = 0.8v 1, 2, 3 +25 o c, +125 o c, -55 o cvcc -0.1 -v input leakage current iin vcc = 5.5v, vin = vcc or gnd 1+25 o c- 0.5 a 2, 3 +125 o c, -55 o c- 5.0 a noise immunity functional test fn vcc = 4.5v, vih = 2.25v, vil = 0.8v (note 2) 7, 8a, 8b +25 o c, +125 o c, -55 o c- - - notes: 1. all voltages referenced to device gnd. 2. for functional tests, vo 4.0v is recognized as a logic ?1?, and vo 0.5v is recognized as a logic ?0?. spec number 518610
4 specifications HCTS157MS table 2. ac electrical performance characteristics parameter symbol (notes 1, 2) conditions group a sub- groups temperature limits units min max data to output tphl vcc = 4.5v 9 +25 o c 2 26 ns 10, 11 +125 o c, -55 o c 2 30 ns tplh vcc = 4.5v 9 +25 o c 2 20 ns 10, 11 +125 o c, -55 o c 2 24 ns enable to output tphl vcc = 4.5v 9 +25 o c 2 22 ns 10, 11 +125 o c, -55 o c 2 25 ns tplh vcc = 4.5v 9 +25 o c 2 22 ns 10, 11 +125 o c, -55 o c 2 25 ns select to output tphl vcc = 4.5v 9 +25 o c 2 31 ns 10, 11 +125 o c, -55 o c 2 37 ns tplh vcc = 4.5v 9 +25 o c 2 25 ns 10, 11 +125 o c, -55 o c 2 29 ns notes: 1. all voltages referenced to device gnd. 2. ac measurements assume rl = 500 ? , cl = 50pf, input tr = tf = 3ns, vil = gnd, vih = 3v. table 3. electrical pe rformance characteristics parameter symbol conditions notes temperature limits units min max capacitance power dissipation cpd vcc = 5.0v, f = 1mhz 1 +25 o c - 54 pf 1 +125 o c, -55 o c - 62 pf input capacitance cin vcc = 5.0v, f = 1mhz 1 +25 o c - 10 pf 1 +125 o c - 10 pf output transition time tthlt- tlh vcc = 4.5v 1 +25 o c - 15 ns 1 +125 o c - 22 ns note: 1. the parameters listed in table 3 are controlled via design or process parameters. min and ma x limits are guaranteed but not d irectly tested. these parameters are characteri zed upon initial design release and upon design changes which affect these characteristi cs. spec number 518610
5 specifications HCTS157MS table 4. dc post radiation electrical performance characteristics parameter symbol (notes 1, 2) conditions temperature 200k rad limits units min max quiescent current icc vcc = 5.5v, vin = vcc or gnd +25 o c - 0.75 ma output current (sink) iol vcc = 4.5v, vin = vcc or gnd, vout = 0.4v +25 o c6.0-ma output current (source) ioh vcc = 4.5v, vin = vcc or gnd, vout = vcc -0.4v +25 o c-6.0-ma output voltage low vol vcc = 4.5v and 5.5v, vih = vcc/2, vil = 0.8v, iol = 50 a +25 o c-0.1v output voltage high voh vcc = 4.5v and 5.5v, vih = vcc/2, vil = 0.8v, ioh = -50 a +25 o cvcc -0.1 -v input leakage current iin vcc = 5.5v, vin = vcc or gnd +25 o c- 5 a noise immunity functional test fn vcc = 4.5v, vih = 2.25v, vil = 0.8v, (note 3) +25 o c--- data to output tphl vcc = 4.5v +25 o c 2 30 ns tplh vcc = 4.5v +25 o c 2 24 ns enable to output tphl vcc = 4.5v +25 o c 2 25 ns tplh vcc = 4.5v +25 o c 2 25 ns select to output tphl vcc = 4.5v +25 o c 2 37 ns tplh vcc = 4.5v +25 o c 2 29 ns notes: 1. all voltages referenced to device gnd. 2. ac measurements assume rl = 500 ? , cl = 50pf, input tr = tf = 3ns, vil = gnd, vih = 3v. 3. for functional tests vo 4.0v is recognized as a logic ?1?, and vo 0.5v is recognized as a logic ?0?. table 5. burn-in and operating life test, delta parameters (+25 o c) parameter group b subgroup delta limit icc 5 12 a iol/ioh 5 -15% of 0 hour spec number 518610
6 specifications HCTS157MS table 6. applicable subgroups conformance groups method group a subgroups read and record initial test (preburn-in) 100%/5004 1, 7, 9 icc, iol/h interim test i (postburn-in) 100%/5004 1, 7, 9 icc, iol/h interim test ii (postburn-in) 100%/5004 1, 7, 9 icc, iol/h pda 100%/5004 1, 7, 9, deltas interim test iii (postburn-in) 100%/5004 1, 7, 9 icc, iol/h pda 100%/5004 1, 7, 9, deltas final test 100%/5004 2, 3, 8a, 8b, 10, 11 group a (note 1) sample/5005 1, 2, 3, 7, 8a, 8b, 9, 10, 11 group b subgroup b-5 sample/5005 1, 2, 3, 7, 8a, 8b, 9, 10, 11, deltas subgroups 1, 2, 3, 9, 10, 11 subgroup b-6 sample/5005 1, 7, 9 group d sample/5005 1, 7, 9 note: 1. alternate group a testing in accordance with method 5005 of mil-std-883 may be exercised. table 7. total dose irradiation conformance groups method test read and record pre rad post rad pre rad post rad group e subgroup 2 5005 1, 7, 9 table 4 1, 9 table 4 (note 1) note: 1. except fn test which will be performed 100% go/no-go. table 8. static burn-in and dynamic burn-in test connections open ground 1/2 vcc = 3v 0.5v vcc = 6v 0.5v oscillator 50khz 25khz static burn-in i test connections (note 1) 4, 7, 9, 12 1 - 3, 5, 6, 8, 10, 11, 13 - 15 -16-- static burn-in ii test connections (note 1) 4, 7, 9, 12 8 - 1 - 3, 5, 6, 10, 11, 13 - 16 -- dynamic burn-in test connections (note 2) - 8, 15 4, 7, 9, 12 16 2, 3, 5, 6, 10, 11, 13, 14 1 notes: 1. each pin except vcc and gnd will have a resistor of 10k ? 5% for static burn-in. 2. each pin except vcc and gnd will have a resistor of 680 ? 5% for dynamic burn-in. table 9. irradiation test connections open ground vcc = 5v 0.5v 4, 7, 9, 12 8 1, 2, 3, 5, 6, 10, 11, 13 - 16 note: each pin except vcc and g nd will have a resistor of 47k ? 5% for irradiation testing. group e, subgroup 2, sample size is 4 dice/wafer 0 failures. spec number 518610
7 HCTS157MS intersil space level product flow - ?ms? wafer lot acceptance (all lots) method 5007 (includes sem) gamma radiation verification (each wafer) method 1019, 4 samples/wafer, 0 rejects 100% nondestructive bond pull, method 2023 sample - wire bond pull monitor, method 2011 sample - die shear monitor, method 2019 or 2027 100% internal visual inspection, method 2010, condition a 100% temperature cycle, method 1010, condition c, 10 cycles 100% constant acceleration, method 2001, condition per method 5004 100% pind, method 2020, condition a 100% external visual 100% serialization 100% initial electrical test (t0) 100% static burn-in 1, condition a or b, 24 hrs. min., +125 o c min., method 1015 100% interim electrical test 1 (t1) 100% delta calculation (t0-t1) 100% static burn-in 2, condition a or b, 24 hrs. min., +125 o c min., method 1015 100% interim electrical test 2 (t2) 100% delta calculation (t0-t2) 100% pda 1, method 5004 (notes 1and 2) 100% dynamic burn-in, condition d, 240 hrs., +125 o c or equivalent, method 1015 100% interim electrical test 3 (t3) 100% delta calculation (t0-t3) 100% pda 2, method 5004 (note 2) 100% final electrical test 100% fine/gross leak, method 1014 100% radiographic, method 2012 (note 3) 100% external visual, method 2009 sample - group a, method 5005 (note 4) 100% data package generation (note 5) notes: 1. failures from interim electrical test 1 and 2 are combined for determining pda 1. 2. failures from subgroup 1, 7, 9 and deltas are used for calculating pda. the maximum allowable pda = 5% with no more than 3% o f the failures from subgroup 7. 3. radiographic (x-ray) inspection may be performed at any point after serialization as allowed by method 5004. 4. alternate group a testing may be performed as allowed by mil-std-883, method 5005. 5. data package contents: cover sheet (intersil name and/or logo, p.o. number, customer part number, lot date code, intersil part number, lot number, qu an- tity). wafer lot acceptance report (method 5007). includes reproductions of sem photos with percent of step coverage. gamma radiation report. contains cover page, disposition, rad dose, lot number, test package used, specification numbers, test equipment, etc. radiation read and record data on file at intersil. x-ray report and film. includes penetrometer measurements. screening, electrical, and group a attributes (screening attributes begin after package seal). lot serial number sheet (good units serial number and lot number). variables data (all delta operations). data is identified by serial number. data header includes lot number and date of test. the certificate of conformance is a part of the shipping invoice and is not part of the data book. the certificate of conforma nce is signed by an authorized quality representative. spec number
8 HCTS157MS ac timing diagrams ac voltage levels parameter hcts units vcc 4.50 v vih 3.00 v vs 1.30 v vil 0 v gnd 0 v vs input output output tthl 80% 20% 80% 20% vih vil voh vol voh vol tplh tphl vs ttlh ac load circuit dut test cl rl point cl = 50pf rl = 500 ? spec number 518610
9 all intersil u.s. products are manufactured, asse mbled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of paten ts or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see www.intersil.com HCTS157MS die characteristics die dimensions: 84 x 84 mils metallization: type: sial metal thickness: 11k ? 1k ? glassivation: type: sio 2 thickness: 13k ? 2.6k ? worst case current density: <2.0 x 10 5 a/cm 2 bond pad size: 100 m x 100 m 4 mils x 4 mils metallization mask layout HCTS157MS note: the die diagram is a generic plot from a similar hcs dev ice. it is intended to indicate approximate die size and bond pad location. the mask series for the hcts157 is ta14471a. s (1) 1i0 (2) 1i1 (3) 1y (4) 2i0 (5) 2i1 (6) 2y (7) gnd (8) 3y (9) (11) 3i0 (12) 4y (13) 4i1 (14) 4i0 e (15) vcc (16) (10) 3i1 spec number 518610
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